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Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy
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10.1063/1.100830
/content/aip/journal/apl/54/1/10.1063/1.100830
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/1/10.1063/1.100830
/content/aip/journal/apl/54/1/10.1063/1.100830
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/content/aip/journal/apl/54/1/10.1063/1.100830
1989-01-02
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/1/10.1063/1.100830
10.1063/1.100830
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