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Effect of a GaAs buffer layer grown at low substrate temperatures on a high‐electron‐mobility modulation‐doped two‐dimensional electron gas
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10.1063/1.101358
/content/aip/journal/apl/54/10/10.1063/1.101358
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/10/10.1063/1.101358
/content/aip/journal/apl/54/10/10.1063/1.101358
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/content/aip/journal/apl/54/10/10.1063/1.101358
1989-03-06
2014-11-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of a GaAs buffer layer grown at low substrate temperatures on a high‐electron‐mobility modulation‐doped two‐dimensional electron gas
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/10/10.1063/1.101358
10.1063/1.101358
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