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Longitudinal electron drift mobility of hydrogenated amorphous silicon/silicon nitride multilayer structures revealed by time‐of‐flight measurements
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10.1063/1.101478
/content/aip/journal/apl/54/12/10.1063/1.101478
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/12/10.1063/1.101478
/content/aip/journal/apl/54/12/10.1063/1.101478
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/content/aip/journal/apl/54/12/10.1063/1.101478
1989-03-20
2015-07-04
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Longitudinal electron drift mobility of hydrogenated amorphous silicon/silicon nitride multilayer structures revealed by time‐of‐flight measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/12/10.1063/1.101478
10.1063/1.101478
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