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Growth kinetics of amorphous interlayer formed by interdiffusion of polycrystalline Ti thin‐film and single‐crystal silicon
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10.1063/1.100720
/content/aip/journal/apl/54/13/10.1063/1.100720
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/13/10.1063/1.100720
/content/aip/journal/apl/54/13/10.1063/1.100720
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/content/aip/journal/apl/54/13/10.1063/1.100720
1989-03-27
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth kinetics of amorphous interlayer formed by interdiffusion of polycrystalline Ti thin‐film and single‐crystal silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/13/10.1063/1.100720
10.1063/1.100720
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