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Channel sensitivity to gate roughness in a split‐gate GaAs‐AlGaAs heterostructure
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4.J. H. Davies, Semicond. Sci. Technol. 3, 995 (1988). We are indebted to Dr. Davies for a preprint.
5.See, for example, U. Merkt, Ch. Sikorski, and J. P. Kotthaus, Superlatt. Microstruct. 3, 679 (1987), Fig. 1(b), and the papers on nanostructure technology in Vol. 32, No. 4 of the IBM Journal of Research and Development.
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8.There are two contours, symmetric about the line We use the one with
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