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Electro‐optic sideband generation at 72 GHz
1.T. F. Gallagher, N. H. Tran, and J. P. Watjen, Appl. Opt. 25, 510 (1986).
2.I. P. Kaminov, T. J. Bridges, and M. A. Pollack, Appl. Phys. Lett. 16, 416 (1970);
2.reprinted in, I. P. Kaminov, An Introduction to Electrooptic Devices (Academic, New York, 1974).
3.G. C. Bjorklund, Opt. Lett. 5, 15 (1980).
4.K. M. Evenson, G. W. Day, J. S. Wells, and L. O. Mullen, Appl. Phys. Lett. 20, 133 (1972).
5.The rf value for the electro‐optic coefficient is used here. To our knowledge it has not been measured for the very high frequencies employed in our experiment. The index of refraction is nearly constant for frequencies between 65 MHz and 7 THz. See Ref. 1 and I. P. Kaminov and E. H. Turner, Proc. IEEE 54, 1374 (1966).
6.A simple arugment explains this behavior: At an antinode the tangential electric field is continuous and hence the field strength inside and outside. At a node the tangential magnetic field is maximum and continuous; its amplitude is related to the electric field by the index of refraction, from which the ratio of the electric field strengths inside and outside follows.
7.U. Harbarth, J. Kowalski, R. Neumann, S. Noehte, K. Scheffzek, and G. zu Putlitz, J. Phys. E 20, 409 (1987).
8.A. Yariv and P. Yeh, Optical Waves in Crystals (Wiley, New York, 1984).
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