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Existence of interstitialcy Zn atoms in GaAs:Zn grown by the liquid‐encapsulated Czochralski technique
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10.1063/1.101123
/content/aip/journal/apl/54/22/10.1063/1.101123
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/22/10.1063/1.101123
/content/aip/journal/apl/54/22/10.1063/1.101123
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/content/aip/journal/apl/54/22/10.1063/1.101123
1989-05-29
2014-09-03
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Existence of interstitialcy Zn atoms in GaAs:Zn grown by the liquid‐encapsulated Czochralski technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/22/10.1063/1.101123
10.1063/1.101123
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