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Ion beam induced epitaxy of deposited amorphous Si and Si‐Ge films
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10.1063/1.101523
/content/aip/journal/apl/54/23/10.1063/1.101523
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/23/10.1063/1.101523
/content/aip/journal/apl/54/23/10.1063/1.101523
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/content/aip/journal/apl/54/23/10.1063/1.101523
1989-06-05
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ion beam induced epitaxy of deposited amorphous Si and Si‐Ge films
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/23/10.1063/1.101523
10.1063/1.101523
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