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Thermal equilibrium changes in diode structures of doped amorphous silicon
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10.1063/1.100980
/content/aip/journal/apl/54/3/10.1063/1.100980
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/3/10.1063/1.100980
/content/aip/journal/apl/54/3/10.1063/1.100980
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/content/aip/journal/apl/54/3/10.1063/1.100980
1989-01-16
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal equilibrium changes in diode structures of doped amorphous silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/3/10.1063/1.100980
10.1063/1.100980
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