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Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
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10.1063/1.101014
/content/aip/journal/apl/54/3/10.1063/1.101014
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/3/10.1063/1.101014
/content/aip/journal/apl/54/3/10.1063/1.101014
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/content/aip/journal/apl/54/3/10.1063/1.101014
1989-01-16
2014-12-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/3/10.1063/1.101014
10.1063/1.101014
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