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Influence of the As:Ga flux ratio on growth rate, interface quality, and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy
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10.1063/1.100898
/content/aip/journal/apl/54/7/10.1063/1.100898
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/7/10.1063/1.100898
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/content/aip/journal/apl/54/7/10.1063/1.100898
1989-02-13
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the As:Ga flux ratio on growth rate, interface quality, and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/7/10.1063/1.100898
10.1063/1.100898
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