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Surface recombination current and emitter compositional grading in N p n and P n p GaAs/Al x Ga1 x As heterojunction bipolar transistors
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10.1063/1.100904
/content/aip/journal/apl/54/7/10.1063/1.100904
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/7/10.1063/1.100904
/content/aip/journal/apl/54/7/10.1063/1.100904
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/content/aip/journal/apl/54/7/10.1063/1.100904
1989-02-13
2014-12-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface recombination current and emitter compositional grading in Npn and Pnp GaAs/AlxGa1−xAs heterojunction bipolar transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/7/10.1063/1.100904
10.1063/1.100904
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