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Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane
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10.1063/1.100910
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    Affiliations:
    1 Centre National d’Etudes des Télécommunications, BP 98, 38243 Meylan Cedex, France
    2 Laboratoire de Physique des Composants Semiconducteurs/Centre National de la Recherche Scientifique, avenue des Martyrs, 38031 Grenoble Cedex, France
    3 Laboratoire d’Etudes des Propriétés Electroniques des Solides/Centre National de la Recherche Scientifique, avenue des Martyrs, 38042 Grenoble Cedex, France
    Appl. Phys. Lett. 54, 658 (1989); http://dx.doi.org/10.1063/1.100910
/content/aip/journal/apl/54/7/10.1063/1.100910
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/7/10.1063/1.100910
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/content/aip/journal/apl/54/7/10.1063/1.100910
1989-02-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/7/10.1063/1.100910
10.1063/1.100910
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