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New mechanism for diffusion of ion‐implanted boron in Si at high concentration
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10.1063/1.100850
/content/aip/journal/apl/54/9/10.1063/1.100850
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/9/10.1063/1.100850
/content/aip/journal/apl/54/9/10.1063/1.100850
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/content/aip/journal/apl/54/9/10.1063/1.100850
1989-02-27
2014-12-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: New mechanism for diffusion of ion‐implanted boron in Si at high concentration
http://aip.metastore.ingenta.com/content/aip/journal/apl/54/9/10.1063/1.100850
10.1063/1.100850
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