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Effect of carrier confinement on the laser‐induced etching of GaAs/AlGaAs heterostructures
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10.1063/1.101696
/content/aip/journal/apl/55/10/10.1063/1.101696
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/10/10.1063/1.101696
/content/aip/journal/apl/55/10/10.1063/1.101696
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/content/aip/journal/apl/55/10/10.1063/1.101696
1989-09-04
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of carrier confinement on the laser‐induced etching of GaAs/AlGaAs heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/10/10.1063/1.101696
10.1063/1.101696
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