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Effect of As4 overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy
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1.94 (1987), , Mater. Res. Soc. Symp. Proc.
1.and 116 (1988), and references therein., Mater. Res. Soc. Symp. Proc.
2.This initial layer is sometimes called the nucleation layer or buffer layer, but since “buffer layer” can also refer to thick layers grown under homoepitaxial conditions, and since both nucleation and growth occur in this first GaAs layer, we will refer to it as the initial layer.
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6.J. W. Christian, The Theory of Transformations in Metals and Alloys, Part 1, 2nd ed. (Pergamon, New York, 1975), p. 15.
7.Equation 1 was obtained by assuming that (i) the islands are disk shaped with fixed aspect ratio, (ii) the number of islands does not change with time, and (iii) the thickness at which the film becomes continuous is given by the island height when the islands cover a large fraction x of the surface. x is related to the radius of the islands by
8.F. Ernst and P. Pirouz, J. Appl. Phys. 64, 4526 (1988).
9.J. Y. Tsao and B. W. Dodson, Appl. Phys. Lett. 53, 848 (1988).
10.J. E. Palmer, C. V. Thompson, G. B. Burns, and C. G. Fonstad (unpublished research);
10.J. E. Palmer, Ph.D. thesis, Department of Electrical Engineering and Comptuter Science, Massachusetts Institute of Technology, Cambridge, MA, 1989.
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