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Rapid heteroepitaxial growth of Ge films on (100) GaAs by pulsed supersonic free‐jet chemical beam epitaxy
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10.1063/1.102261
/content/aip/journal/apl/55/10/10.1063/1.102261
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/10/10.1063/1.102261
/content/aip/journal/apl/55/10/10.1063/1.102261
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/content/aip/journal/apl/55/10/10.1063/1.102261
1989-09-04
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rapid heteroepitaxial growth of Ge films on (100) GaAs by pulsed supersonic free‐jet chemical beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/10/10.1063/1.102261
10.1063/1.102261
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