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Band‐edge discontinuities of strained‐layer In x Ga1−x As/GaAs heterojunctions and quantum wells
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10.1063/1.101649
/content/aip/journal/apl/55/13/10.1063/1.101649
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/13/10.1063/1.101649
/content/aip/journal/apl/55/13/10.1063/1.101649
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/content/aip/journal/apl/55/13/10.1063/1.101649
1989-09-25
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band‐edge discontinuities of strained‐layer InxGa1−xAs/GaAs heterojunctions and quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/13/10.1063/1.101649
10.1063/1.101649
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