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Damage formed by ion implantation in silicon evaluated by displaced atom density and thermal wave signal
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10.1063/1.102473
/content/aip/journal/apl/55/13/10.1063/1.102473
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/13/10.1063/1.102473
/content/aip/journal/apl/55/13/10.1063/1.102473
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/content/aip/journal/apl/55/13/10.1063/1.102473
1989-09-25
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Damage formed by ion implantation in silicon evaluated by displaced atom density and thermal wave signal
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/13/10.1063/1.102473
10.1063/1.102473
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