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Heteroepitaxial In0.1Ga0.9As metal‐semiconductor field‐effect transistors fabricated on GaAs and Si substrates
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10.1063/1.102241
/content/aip/journal/apl/55/15/10.1063/1.102241
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/15/10.1063/1.102241
/content/aip/journal/apl/55/15/10.1063/1.102241
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/content/aip/journal/apl/55/15/10.1063/1.102241
1989-10-09
2014-08-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Heteroepitaxial In0.1Ga0.9As metal‐semiconductor field‐effect transistors fabricated on GaAs and Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/15/10.1063/1.102241
10.1063/1.102241
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