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Photoluminescence studies of Si (100) doped with low‐energy (≤1000 eV) As+ ions during molecular beam epitaxy
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10.1063/1.102303
/content/aip/journal/apl/55/15/10.1063/1.102303
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/15/10.1063/1.102303
/content/aip/journal/apl/55/15/10.1063/1.102303
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/content/aip/journal/apl/55/15/10.1063/1.102303
1989-10-09
2014-09-15
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence studies of Si (100) doped with low‐energy (≤1000 eV) As+ ions during molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/15/10.1063/1.102303
10.1063/1.102303
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