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Response to ‘‘Comment on ‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’ ’’ [Appl. Phys. Lett. 5 5, 1689 (1989)]
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1.Michio Sato and Yoshiji Horikoshi, preceding comment, Appl. Phys. Lett. 55, 1168 (1989).
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4.J. M. Gerard and J. Y. Marzin, Appl. Phys. Lett. 53, 570 (1988).
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/content/aip/journal/apl/55/16/10.1063/1.102193
1989-10-16
2014-07-24
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Scitation: Response to ‘‘Comment on ‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’ ’’ [Appl. Phys. Lett. 55, 1689 (1989)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/16/10.1063/1.102193
10.1063/1.102193
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