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Comment on ‘‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’’[Appl. Phys. Lett. 5 3, 495 (1988)]
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1.K. Taira, H. Kawai, I. Hase, K. Kaneko, and N. Watanabe, Appl. Phys. Lett. 53, 495 (1988).
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2.M. Sato and Y. Horikoshi, J. Cryst. Growth 93, 936 (1988).
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3.M. Sato and Y. Horikoshi, J. Appl. Phys. 66, 851 (1989).
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4.F. Iikawa, P. Motisuke, J. A. Brum, M. A. Sacilotti, A. P. Roth, and R. A. Masut, J. Cryst. Growth 93, 336 (1988).
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/content/aip/journal/apl/55/16/10.1063/1.102211
1989-10-16
2014-11-24
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Scitation: Comment on ‘‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’’[Appl. Phys. Lett. 53, 495 (1988)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/16/10.1063/1.102211
10.1063/1.102211
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