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Photoluminescence of GaAs grown dilutely doped with Si by molecular beam epitaxy with modulated source supplies
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10.1063/1.102169
/content/aip/journal/apl/55/18/10.1063/1.102169
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/18/10.1063/1.102169
/content/aip/journal/apl/55/18/10.1063/1.102169
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/content/aip/journal/apl/55/18/10.1063/1.102169
1989-10-30
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence of GaAs grown dilutely doped with Si by molecular beam epitaxy with modulated source supplies
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/18/10.1063/1.102169
10.1063/1.102169
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