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Model of growth of single‐domain GaAs layers on double‐domain Si substrates by molecular beam epitaxy
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10.1063/1.102141
/content/aip/journal/apl/55/19/10.1063/1.102141
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/19/10.1063/1.102141
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/content/aip/journal/apl/55/19/10.1063/1.102141
1989-11-06
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Model of growth of single‐domain GaAs layers on double‐domain Si substrates by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/19/10.1063/1.102141
10.1063/1.102141
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