1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Dislocation‐accelerated impurity‐induced layer disordering of Al x Ga1−x As‐GaAs quantum well heterostructures grown on GaAs‐on‐Si
Rent:
Rent this article for
USD
10.1063/1.102143
/content/aip/journal/apl/55/19/10.1063/1.102143
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/19/10.1063/1.102143
/content/aip/journal/apl/55/19/10.1063/1.102143
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/55/19/10.1063/1.102143
1989-11-06
2014-11-26
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dislocation‐accelerated impurity‐induced layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures grown on GaAs‐on‐Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/19/10.1063/1.102143
10.1063/1.102143
SEARCH_EXPAND_ITEM