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Universal energy dependence of physical and ion‐enhanced chemical etch yields at low ion energy
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10.1063/1.102336
/content/aip/journal/apl/55/19/10.1063/1.102336
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/19/10.1063/1.102336
/content/aip/journal/apl/55/19/10.1063/1.102336
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/content/aip/journal/apl/55/19/10.1063/1.102336
1989-11-06
2014-07-10
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Universal energy dependence of physical and ion‐enhanced chemical etch yields at low ion energy
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/19/10.1063/1.102336
10.1063/1.102336
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