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High doping of phosphorus in Si using gas source molecular beam epitaxy
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10.1063/1.102122
/content/aip/journal/apl/55/2/10.1063/1.102122
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/2/10.1063/1.102122
/content/aip/journal/apl/55/2/10.1063/1.102122
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/content/aip/journal/apl/55/2/10.1063/1.102122
1989-07-10
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High doping of phosphorus in Si using gas source molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/2/10.1063/1.102122
10.1063/1.102122
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