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Criterion for blocking threading dislocations by strained buffer layers in GaAs grown on Si substrates
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10.1063/1.102094
/content/aip/journal/apl/55/20/10.1063/1.102094
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/20/10.1063/1.102094
/content/aip/journal/apl/55/20/10.1063/1.102094
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/content/aip/journal/apl/55/20/10.1063/1.102094
1989-11-13
2014-09-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Criterion for blocking threading dislocations by strained buffer layers in GaAs grown on Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/20/10.1063/1.102094
10.1063/1.102094
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