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Reduction of interface‐state density by F2 treatment in a metal‐oxide‐semiconductor diode prepared from a photochemical vapor deposited SiO2 film
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10.1063/1.102292
/content/aip/journal/apl/55/23/10.1063/1.102292
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/23/10.1063/1.102292
/content/aip/journal/apl/55/23/10.1063/1.102292
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/content/aip/journal/apl/55/23/10.1063/1.102292
1989-12-04
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of interface‐state density by F2 treatment in a metal‐oxide‐semiconductor diode prepared from a photochemical vapor deposited SiO2 film
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/23/10.1063/1.102292
10.1063/1.102292
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