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GaAs pin photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsine
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10.1063/1.101973
/content/aip/journal/apl/55/24/10.1063/1.101973
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/24/10.1063/1.101973
/content/aip/journal/apl/55/24/10.1063/1.101973
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/content/aip/journal/apl/55/24/10.1063/1.101973
1989-12-11
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs p‐i‐n photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsine
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/24/10.1063/1.101973
10.1063/1.101973
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