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Carbon incorporation in ZnSe grown by metalorganic chemical vapor deposition
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4.K. P. Giapis, Ph.D. Thesis, University of Minnesota, 1989.
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7.It is also possible that there is more carbon in the GaAs substrates than the amount incorporated in the ZnSe films. However, the amount (estimated from the profiles of Fig. 1) is not accurate since the SIMS instrument has not been calibrated for GaAs. In fact, it is higher than the manufacturer’s specifications (Sumitomo Electric Industries).
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11.We have extensively studied doping of ZnSe by MOCVD and MBE using Li, Na, and N as impurities. The resulting doped films had PL spectra with acceptor‐bound exciton positions well removed from the position reported here.
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15.In all of the known cases of group IV incorporation in II‐VI compounds, the group IV atom resides on the group II site as is demonstrated by electron paramagnetic resonance experiments [See, for example, K. Suto and M. Aoki, J. Phys. Soc. Jpn. 26, 287 (1969);
15.K. Suto and M. Aoki, 24, 955 (1968)]. Chemically, this seems reasonable for the case of ZnSe because carbon forms a strong compound with Se and not with Zn. Therefore, carbon should be (formally) a double donor., J. Phys. Soc. Jpn.
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