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Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices
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10.In mobility methods, the “dc conductance” mobility (Refs. 5–7) is usually measured, instead of the “field‐effect” mobility used here. Dual‐transistor analysis may also be applied to linear threshold voltage and/or dc conductance mobility measurements. Saturation values are shown here to illustrate the (perhaps surprising) degree of accuracy that can be obtained even with simpler high‐current measurements.
11.From previous work (e.g., Ref. 8), charge pumping is expected to provide a similar estimate of in this case.
12.The value of for Fig. 1 is and that from Fig. 2 is These values are both larger than the value, determined in Ref. 7 from dc conductance mobility measurements. This illustrates that one value of α cannot be used for all processes and/or measurement techniques.
13.D. M. Fleetwood and M. R. Shaneyfelt (unpublished).
14.To try to improve midgap and slope estimates of and one could estimate the leakage as a function of voltage, and subtract that component before performing the analysis. In this case (and many others), however, the dependence of the parasitic leakage on the gate voltage cannot be determined easily or accurately enough to do so.
15.D. M. Fleetwood, P. S. Winokur, and J. R. Schwank, IEEE Trans. Nucl. Sci. NS‐35, 1497 (1988).
16.D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin, IEEE Trans. Nucl. Sci. NS‐34, 1178 (1987), and references therein.
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