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Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices
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10.1063/1.101854
/content/aip/journal/apl/55/5/10.1063/1.101854
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/5/10.1063/1.101854
/content/aip/journal/apl/55/5/10.1063/1.101854
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/content/aip/journal/apl/55/5/10.1063/1.101854
1989-07-31
2014-11-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/55/5/10.1063/1.101854
10.1063/1.101854
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