Full text loading...
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Stability of boron‐ and gallium‐induced surface structures on Si(111) during deposition and epitaxial growth of silicon
1.E. F. Schubert, Y. Horikoshi, and K. Ploog, Phys. Rev. B 32, 1085 (1985).
2.K. Akimoto, J. Mizuki, I. Hirosawa, T. Tatsumi, H. Hirayama, N. Aizaki, and J. Matsui, Extended Abstracts of the 19th Conference on Solid State Devices and Materials (Business Center for Academic Societies, Tokyo, 1987), p. 463.
3.V. V. Korobtsov, V. G. Lifshits, and A. V. Zotov, Surf. Sci. 195, 467 (1988).
4.H. Hirayama, T. Tatsumi, and N. Aizaki, Surf. Sci. 193, L47 (1988).
5.L. C. Feldman and S. T. Picraux, in Ion Beam Handbook for Materials Analysis, edited by J. W. Mayer and E. Rimini (Academic, New York, 1977), p. 112.
6.I. K. Robinson, W. K. Waskiewicz, R. T. Tung, and J. Bohr, Phys. Rev. Lett. 57, 2714 (1986).
7.R. L. Headrick, I. K. Robinson, E. Vlieg, and L. C. Feldman (unpublished).
8.J. M. Nicholls, B. Reihl, and J. E. Northrup, Phys. Rev. B 35, 4137 (1987).
Article metrics loading...