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Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S‐treated GaAs (100) surfaces
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5.Each component includes spin‐orbit splitting and is a convolution of the Lorentzian lifetime broadening with the Gaussian broadening due to the instrumental resolution and slight variations in the surface bonding. The line shape of the bulk component is obtained from the bulk component (Ref. 6) of cleaved GaAs (110) spectra taken during this experiment as a standard. The deconvolution is constrained to give the same band bending values for the As and Ga.
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8.This possibility is also ruled out by the desorption of the As‐S with no change in the Ga 3d spectra.
9.We have recently studied the desorption of oxygen starting with a surface in which the chemical shifts before desorption indicate no bulk oxide, but only oxygen bonded to surface Ga and As atoms.
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