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Extended defect evolution in boron‐implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion
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10.1063/1.102529
/content/aip/journal/apl/56/13/10.1063/1.102529
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/13/10.1063/1.102529
/content/aip/journal/apl/56/13/10.1063/1.102529
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/content/aip/journal/apl/56/13/10.1063/1.102529
1990-03-26
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Extended defect evolution in boron‐implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/13/10.1063/1.102529
10.1063/1.102529
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