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Role of substrate threading dislocation density in relaxation of highly strained InGaAs/GaAs quantum well structures
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10.1063/1.102511
/content/aip/journal/apl/56/14/10.1063/1.102511
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/14/10.1063/1.102511
/content/aip/journal/apl/56/14/10.1063/1.102511
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/content/aip/journal/apl/56/14/10.1063/1.102511
1990-04-02
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of substrate threading dislocation density in relaxation of highly strained InGaAs/GaAs quantum well structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/14/10.1063/1.102511
10.1063/1.102511
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