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Electrical and structural properties of shallow p + junctions formed by dual (Ga/B) ion implantation
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10.1063/1.102515
/content/aip/journal/apl/56/14/10.1063/1.102515
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/14/10.1063/1.102515
/content/aip/journal/apl/56/14/10.1063/1.102515
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/content/aip/journal/apl/56/14/10.1063/1.102515
1990-04-02
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical and structural properties of shallow p+ junctions formed by dual (Ga/B) ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/14/10.1063/1.102515
10.1063/1.102515
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