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Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine
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10.1063/1.102494
/content/aip/journal/apl/56/15/10.1063/1.102494
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/15/10.1063/1.102494
/content/aip/journal/apl/56/15/10.1063/1.102494
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/content/aip/journal/apl/56/15/10.1063/1.102494
1990-04-09
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/15/10.1063/1.102494
10.1063/1.102494
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