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1.5 μm GaInAsP/InP buried‐heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen
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10.1063/1.103151
/content/aip/journal/apl/56/17/10.1063/1.103151
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/17/10.1063/1.103151
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/content/aip/journal/apl/56/17/10.1063/1.103151
1990-04-23
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 1.5 μm GaInAsP/InP buried‐heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/17/10.1063/1.103151
10.1063/1.103151
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