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Selective dry etching of InGaAs and InP over AlInAs in CH4/H2/SF6
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10.1063/1.102963
/content/aip/journal/apl/56/22/10.1063/1.102963
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/22/10.1063/1.102963
/content/aip/journal/apl/56/22/10.1063/1.102963
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/content/aip/journal/apl/56/22/10.1063/1.102963
1990-05-28
2014-08-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective dry etching of InGaAs and InP over AlInAs in CH4/H2/SF6
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/22/10.1063/1.102963
10.1063/1.102963
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