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Material‐enhanced spatially dependent etch rate of SiO2 in CF4 reactive ion etching
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10.1063/1.102930
/content/aip/journal/apl/56/23/10.1063/1.102930
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/23/10.1063/1.102930
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/content/aip/journal/apl/56/23/10.1063/1.102930
1990-06-04
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Material‐enhanced spatially dependent etch rate of SiO2 in CF4 reactive ion etching
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/23/10.1063/1.102930
10.1063/1.102930
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