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Stability of AlAs in Al x Ga1−x As‐AlAs‐GaAs quantum well heterostructures
1.N. Holonyak, Jr., W. D. Laidig, B. A. Vojak, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, Phys. Rev. Lett. 45, 1703 (1980).
2.C. Hilsum and A. C. Rose‐Innes, “Semiconducting III‐V Compounds,” (Pergamon, Oxford, 1961), p. 3.
3.W. D. Johnson, Jr. and W. M. Callahan, Appl. Phys. Lett. 28, 150 (1976).
4.R. D. Dupuis (private communication).
4.Dupuis attempted AlAs windows on GaAs solar cells grown by metalorganic chemical vapor deposition but abandoned their use immediately upon noticing their instability (changing color in room air). See R. D. Dupuis, P. D. Dapkus, R. D. Yingling and L. A. Moudy, Appl. Phys. Lett. 31, 201 (1977).
5.R. D. Dupuis, L. A. Moudy, and P. D. Dapkus, in Proceedings of 7th International Symposium on GaAs and Related Compounds, edited by C. M. Wolfe (Institute of Physics, London, 1979), pp. 1–9.
6.W. D. Laidig, N. Holonyak, jr., M. D. Camras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, Appl. Phys. Lett. 38, 776 (1981).
7.N. Holonyak, Jr., W. D. Laidig, M. D. Camras, J. J. Coleman, and P. D. Dapkus, Appl. Phys. Lett. 39, 102 (1981).
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