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Low‐threshold GaAs/AlGaAs graded‐index separate confinement heterostructure lasers grown by molecular beam epitaxy on oxide‐masked Si substrates
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10.1063/1.102870
/content/aip/journal/apl/56/25/10.1063/1.102870
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/25/10.1063/1.102870
/content/aip/journal/apl/56/25/10.1063/1.102870
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/content/aip/journal/apl/56/25/10.1063/1.102870
1990-06-18
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low‐threshold GaAs/AlGaAs graded‐index separate confinement heterostructure lasers grown by molecular beam epitaxy on oxide‐masked Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/25/10.1063/1.102870
10.1063/1.102870
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