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Dynamics of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates
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10.1063/1.102878
/content/aip/journal/apl/56/25/10.1063/1.102878
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/25/10.1063/1.102878
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/content/aip/journal/apl/56/25/10.1063/1.102878
1990-06-18
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dynamics of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)B GaAs substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/25/10.1063/1.102878
10.1063/1.102878
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