Real‐space transfer in three‐terminal InGaAs/InAlAs/InGaAs heterostructure devices
1.A. Kastalsky and S. Luryi, IEEE Electron Device Lett. EDL‐4, 334 (1983).
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12.One estimate of in can be obtained by a linear interpolation between the values of and 1.16 eV for GaAs and InAs, respectively;
12.see Table IX in J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 14, 556 (1976).
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14.In general, the source‐drain characteristic of a NERFET can be affected by a parasitic leakage of cold electrons to the collector layer, especially at high In particular, it affects the peak‐to‐valley ratio, as is clearly seen in Fig. 2(a), where this ratio is higher at room temperature than at 77 K. At collector voltages producing highest peak‐to‐valley ratios, the data of Refs. 6 and 8 show a leakage comparable to the peak drain current. Thus, the peak‐to‐valley ratio of 160, reported in Ref. 6, is achieved at where the leakage current is around 2 mA. In our present devices, the maximum leakage at is only of order 100 μA.
15.A meaningful analogy can be drawn between this process and the currentdriven instability which can occur in a single‐barrier heterostructure diode, cf. K. Hess, T. K. Higman, M. A. Emanuel, and J. J. Coleman, J. Appl. Phys. 60, 3775 (1986).
16.S. Luryi, in Heterojunction Band Discontinuities: Physics and Device Applications, edited by F. Capasso and G. Margaritondo (Elsevier, Amsterdam, 1987), Chap. 12, pp. 533–535.
17.This effect is similar to the distortion of a hot‐electron distribution function [K. Hess, in Physics of Nonlinear Transport in Semiconductors, edited by D. K. Ferry, J. R. Barker, and C. Jacoboni (Plenum, New York, 1980);
17.S. E. Esipov and Y. B. Levinson, Adv. Phys. 36, 331 (1987)] above the optical‐phonon threshold at low densities of the electron gas (below ). With the reduced electron‐electron collision rate, the high‐energy tails of the distribution can be strongly depressed—compared to a Maxwellian curve—because of the emission of optical phonons.
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