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Thermoelectric effect spectroscopy of deep levels—application to semi‐insulating GaAs
1.U. V. Desnica and B. Šantić, Appl. Phys. Lett. 54, 810 (1989).
2.U. V. Desnica, Rad. Effect Defect Solids 111&112, 83 (1989).
3.R. Bray, K. Wan, and J. C. Parker, Phys. Rev. Lett. 57, 2434 (1986).
4.J. Lagovski, M. Bugajski, M. Matsui, and H. C. Gatos, Appl. Phys. Lett. 51, 511 (1987).
5.N. Tsukade, T. Kikuta, and K. Ishida, Phys. Rev. B 33, 8858 (1986).
6.J. C. Burgoin, H. J. von Bardeleben, and D. Stievenard, J. Appl. Phys. 64, R65 (1988).
7.G. M. Martin, Semi‐Insulating III‐V Materials (Shiva, Nottingham, 1980), pp. 13–28.
8.R. E. Kremer, M. C. Arikan, J. C. Abele, and J. S. Blakemore, J. Appl. Phys. 62, 2424 (1987).
9.D. C. Look, in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1983), Vol. 19, p. 75.
10.It may be puzzling why some parts of TEES spectra exhibit features much sharper than the TSC spectra, as both result from the same thermal emission processes. The explanation lies in the fact that is the sum of all components but the sum of their absolute values. On the contrary, is sensitive on the signs of carriers, i.e., on the signs of traps. In the case of energetically closely spaced traps of opposite signs, the computer simulation of TSC and TEES spectra had confirmed this explanation.
11.A. L. Lin, E. Omelianovski, and R. H. Bube, J. Appl. Phys. 47, 1982 (1976).
12.J. Jimenez, P. Hernandez, and J. A. de Saja, Phys. Rev. B 35, 3832 (1987).
13.W. C. Mitchel, D. W. Fischer, and M. O. Manasreh, Solid State Common. 71, 337 (1989).
14.B. Šantić, Dunja I. Desnica, B. G. Petrović, and U. Desnica, Solid State Commun. (in press).
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