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Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress
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10.1063/1.102819
/content/aip/journal/apl/56/3/10.1063/1.102819
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/3/10.1063/1.102819
/content/aip/journal/apl/56/3/10.1063/1.102819
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/content/aip/journal/apl/56/3/10.1063/1.102819
1990-01-15
2014-08-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/3/10.1063/1.102819
10.1063/1.102819
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