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Direct correlation between reflection electron diffraction intensity behavior during the growth of Al x Ga1−x As/GaAs quantum wells and their photoluminescence properties
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10.1063/1.102840
/content/aip/journal/apl/56/3/10.1063/1.102840
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/3/10.1063/1.102840
/content/aip/journal/apl/56/3/10.1063/1.102840
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/content/aip/journal/apl/56/3/10.1063/1.102840
1990-01-15
2014-10-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct correlation between reflection electron diffraction intensity behavior during the growth of AlxGa1−xAs/GaAs quantum wells and their photoluminescence properties
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/3/10.1063/1.102840
10.1063/1.102840
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