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X‐ray moiré pattern in dislocation‐free silicon‐on‐insulator wafers prepared by oxygen ion implantation
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10.1063/1.102782
/content/aip/journal/apl/56/4/10.1063/1.102782
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/4/10.1063/1.102782
/content/aip/journal/apl/56/4/10.1063/1.102782
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/content/aip/journal/apl/56/4/10.1063/1.102782
1990-01-22
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: X‐ray moiré pattern in dislocation‐free silicon‐on‐insulator wafers prepared by oxygen ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/56/4/10.1063/1.102782
10.1063/1.102782
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